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A10676A - (Pkg 4) MJE182 3A 80V NPN Plastic Power Transistor
The MJE182 is designed for low power audio amplifier and low current, high speed switching applications.
Features:
Collector-Emitter Sustaining Voltage: VCEO(sus) = 80 Vdc
DC Current Gain: hFE = 30 (Min) @ IC = 0.5 Adc
Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakages: ICBO = 100 nA (Max) @ Rated VCB
Epoxy Meets UL 94 V-0 @ 0.125 in
TO-225AA package. Actual brand may vary from picture. Sold as a package of 4.
Features:
Collector-Emitter Sustaining Voltage: VCEO(sus) = 80 Vdc
DC Current Gain: hFE = 30 (Min) @ IC = 0.5 Adc
Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakages: ICBO = 100 nA (Max) @ Rated VCB
Epoxy Meets UL 94 V-0 @ 0.125 in
TO-225AA package. Actual brand may vary from picture. Sold as a package of 4.
$9.80
A10676A - (Pkg 4) MJE182 3A 80V NPN Plastic Power Transistor—
$9.80
Description
The MJE182 is designed for low power audio amplifier and low current, high speed switching applications.
Features:
Collector-Emitter Sustaining Voltage: VCEO(sus) = 80 Vdc
DC Current Gain: hFE = 30 (Min) @ IC = 0.5 Adc
Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakages: ICBO = 100 nA (Max) @ Rated VCB
Epoxy Meets UL 94 V-0 @ 0.125 in
TO-225AA package. Actual brand may vary from picture. Sold as a package of 4.
Features:
Collector-Emitter Sustaining Voltage: VCEO(sus) = 80 Vdc
DC Current Gain: hFE = 30 (Min) @ IC = 0.5 Adc
Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakages: ICBO = 100 nA (Max) @ Rated VCB
Epoxy Meets UL 94 V-0 @ 0.125 in
TO-225AA package. Actual brand may vary from picture. Sold as a package of 4.
